Dry Etching

Dry etching is a key step in device fabrication where layers or selected areas of material are removed by employing a plasma of reactive gases. The MRL offers several dry etching tools applicable to a variety of layers and substrate types and sizes.

Dry Etching Equipment

Equipment Name	Contact	Location
Equipment Name	Contact	Location
Harrick Plasma Oxygen Cleaner	Xiaoli Wang xlwang84	326 MRL	The Harrick Plasma PDC-32G Cleaner is low-cost bench-topinductively coupled plasma device. It may be employed in a broad range of surface engineering applications, including nanoscale surface cleaning, surface preparation and surface modification/treatment. See More Details
Commonwealth Scientific Ion Milling & Thermal Evaporator System	Toyanath Joshi tojoshi Lon Alan Westfall lonw	334 MRL	The Commonwealth Scientific Ion Milling & Thermal Evaporator System is a unique system which integrates the ion milling and thermal evaporator capabilities into one system. See More Details
Nordson March Reactive Ion Etch (RIE) Plasma System 1 & 2	Xiaoli Wang xlwang84 Toyanath Joshi tojoshi	342 MRL	March CS-1701 reactive ion etcher is a bench-top system with water cooled RF platen. It is capable of etching photoresist, polymer and graphene. This system could be operated under manual mode or auto mode. See More Details
Nano-Master Reactive Ion Etch (RIE) Plasma System	Xiaoli Wang xlwang84 Toyanath Joshi tojoshi	342 MRL	Nano-master NPC 3000 is a bench-top Reactive Ion Etching (RIE) system with showerhead gas distribution and water cooled RF platen. It is designed to meet a wide range of needs including sample cleaning, photoresist stripping, surface modification, polymer etching and silicon etching. The chamber opens from the top for wafer loading or unloading. It can accept up to 8" (200 mm) wafers. See More Details
Plasma-Therm 790 MF Reactive Ion Etch (RIE) Plasma System	Xiaoli Wang xlwang84 Toyanath Joshi tojoshi	342 MRL	Plasma-therm 790 MF is a stand-alone Reactive Ion Etching (RIE) system with showerhead gas distribution and water cooled RF platen. The chamber could reach a base pressure in the 3x10-5Torr range, and it can be operated in the pressure range of 10mTorr to 100mTorr. The following gases are installed: CF4, CHF3, SF6 and O2.The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlled separately by a throttle valve between the chamber and the pump. All system functions are controlled from the computer. The control program has both manual and automatic modes. See More Details