Dry Etching
Dry etching is a key step in device fabrication where layers or selected areas of material are removed by employing a plasma of reactive gases. The MRL offers several dry etching tools applicable to a variety of layers and substrate types and sizes.
|
RIE system |
Max. RF power (W) |
Allowable pressure range (mTorr) |
Available process gases |
Allowable Materials (*) |
Sample Size (**) |
|
Samco RIE-10NR |
300 |
|
CF4, SF6, O2, Ar |
Substrates (e.g., Si, Glass, etc.), 2D Transition-metal dichalcogenides, dielectrics (metal oxides, nitrides, etc.) |
Diameter < 8 inches, total thickness < 40 mm |
|
March CS-1701 RIE |
400 |
|
CF4, O2 |
Photoresist, polymer, graphene. |
Diameter < 4 inches, total thickness < 10 mm |
|
Plasma-therm 790 MF |
300 |
|
CF4, SF6, CHF3, O2 |
Silicon, silicon dioxide, silicon nitride |
Diameter < 8 inches, total thickness < 10 mm |
|
Nano-master NPC 3000 |
400 |
|
CF4, SF6, O2, Ar |
Photoresist, polymer, graphene, silicon |
Diameter < 8 inches, total thickness < 10 mm |
(*) Discuss with staff before actually using any of those materials and if other materials are needed in the process. This is required for new and existing experienced users.
(**) Etching rate and quality will depend on several factors (type of material, sample thickness, pattern details, masking parameters, etc.). A discussion with staff is important in order to decide tool assignment and feasibility.
Dry Etching Equipment
| Equipment Name | Contact | Location | |
|---|---|---|---|
| Equipment Name | Contact | Location | |
| SAMCO RIE-10NR Reactive Ion Etch System |
|
342 MRL |
The SAMCO RIE-10NR is a cutting-edge, fully automated Reactive Ion Etching (RIE) system specifically designed to meet the rigorous process demands of fluorine chemistry for research and production purposes. With precision, it executes etching operations, ensuring minimal sidewall deterioration and exceptional selectivity between various materials. Its capabilities extend to processing wafers up to 8 inches in diameter, showcasing its versatility in handling diverse requirements. |
| Harrick Plasma Oxygen Cleaner |
|
342 MRL |
The Harrick Plasma PDC-32G Cleaner is low-cost bench-topinductively coupled plasma device. It may be employed in a broad range of surface engineering applications, including nanoscale surface cleaning, surface preparation and surface modification/treatment. |
| Commonwealth Scientific Ion Milling & Thermal Evaporator System |
|
334 MRL |
The Commonwealth Scientific Ion Milling & Thermal Evaporator System is a unique system which integrates the ion milling and thermal evaporator capabilities into one system. |
| Nordson March Reactive Ion Etch (RIE) Plasma System 2 |
|
342 MRL |
March CS-1701 reactive ion etcher is a bench-top system with water cooled RF platen. It is capable of etching photoresist, polymer and graphene. This system could be operated under manual mode or auto mode. |
| Nano-Master Reactive Ion Etch (RIE) Plasma System |
|
342 MRL |
Nano-master NPC 3000 is a bench-top Reactive Ion Etching (RIE) system with showerhead gas distribution and water cooled RF platen. It is designed to meet a wide range of needs including sample cleaning, photoresist stripping, surface modification, polymer etching and silicon etching. The chamber opens from the top for wafer loading or unloading. It can accept up to 8" (200 mm) wafers. |
| Plasma-Therm 790 MF Reactive Ion Etch (RIE) Plasma System |
|
342 MRL |
Plasma-therm 790 MF is a stand-alone Reactive Ion Etching (RIE) system with showerhead gas distribution and water cooled RF platen. The chamber could reach a base pressure in the 3x10-5Torr range, and it can be operated in the pressure range of 10mTorr to 100mTorr. The following gases are installed: CF4, CHF3, SF6 and O2.The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlled separately by a throttle valve between the chamber and the pump. All system functions are controlled from the computer. The control program has both manual and automatic modes. |