Dry etching is a key step in device fabrication where layers or selected areas of material are removed by employing a plasma of reactive gases. The MRL offers several dry etching tools applicable to a variety of layers and substrate types and sizes.

Dry Etching Equipment

Equipment Name Contact Location
Equipment Name Contact Location
Harrick Plasma Oxygen Cleaner xlwang84 326 MRL

The Harrick Plasma PDC-32G Cleaner is low-cost bench-topinductively coupled plasma device. It may be employed in a broad range of surface engineering applications, including nanoscale surface cleaning, surface preparation and surface modification/treatment.

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Commonwealth Scientific Ion Milling & Thermal Evaporator System pcsun taoshang 334 MRL

The Commonwealth Scientific Ion Milling & Thermal Evaporator System is a unique system which integrates the ion milling and thermal evaporator capabilities into one system.

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Nordson March Reactive Ion Etch (RIE) Plasma System 1 & 2 xlwang84 taoshang,jeffg 342 MRL

March CS-1701 reactive ion etcher is a bench-top system with water cooled RF platen. It is capable of etching photoresist, polymer and graphene. This system could be operated under manual mode or auto mode.

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Nano-Master Reactive Ion Etch (RIE) Plasma System xlwang84 taoshang 342 MRL

Nano-master NPC 3000 is a bench-top Reactive Ion Etching (RIE) system with showerhead gas distribution and water cooled RF platen. It is designed to meet a wide range of needs including sample cleaning, photoresist stripping, surface modification, polymer etching and silicon etching. The chamber opens from the top for wafer loading or unloading. It can accept up to 8" (200 mm) wafers.

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Plasma-Therm 790 MF Reactive Ion Etch (RIE) Plasma System xlwang84 taoshang 342 MRL

Plasma-therm 790 MF is a stand-alone Reactive Ion Etching (RIE) system with showerhead gas distribution and water cooled RF platen. The chamber could reach a base pressure in the 3x10-5Torr range, and it can be operated in the pressure range of 10mTorr to 100mTorr. The following gases are installed: CF4, CHF3, SF6 and O2.The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlled separately by a throttle valve between the chamber and the pump. All system functions are controlled from the computer. The control program has both manual and automatic modes.

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