MRL’s surface analysis suite provides a variety of instrumentation for surface chemical analysis, ranging from accelerator-based techniques to various spectroscopy, spectrometry, and profilometry tools.
Atom Probe Tomography
The Cameca Local Electrode Atom Probe (LEAP) 5000XS uses field evaporation of atoms from a needle-shaped specimen to generate three-dimensional (3D) information at near atomic resolution and possessing chemical sensitivity that can reach parts per million.
Ion particles accelerated to high energy (0.5 – 3 MeV) can be used for ion implantation of materials and also for non-destructive analytical techniques involving scattering processes such as Rutherford Backscattering Spectrometry (RBS).
Secondary Ion Mass Spectrometry
In secondary ion mass spectrometry (SIMS), a focused ion beam is directed to a solid surface, removing material in the form of neutral and ionized atoms and molecules.
Auger Electron Spectroscopy
Auger electron spectroscopy (AES) is a surface sensitive analytical technique used mainly to determine elemental compositions of materials and, in certain cases to identify the chemical states of surface atoms. With AES, a primary electron beam is used to excite secondary and Auger electrons.
X-Ray Photoelectron Spectroscopy
In X-ray photoelectron spectroscopy (XPS), also called electron spectroscopy for chemical analysis (ESCA), X-rays excite photoelectrons, and the emitted electron signal is plotted as a spectrum of binding energies.
Surface profilometry is a contact measurement technique in which a diamond-tipped stylus is used to measure surface topography as it moves across the surface of a specimen.
Equipment in this Core
|Cameca LEAP 5000XS Atom Probe Tomography||tspila wswiech||B01 MRL||
The Cameca Local Electrode Atom Probe (LEAP) 5000XS uses field evaporation of atoms from a needle-shaped specimen to generate three-dimensional (3D) information at near atomic resolution and possessing chemical sensitivity that can reach parts per million.See More Details
|Sloan Dektak3ST Profilometer||kawalsh jcspear||B80 MRL||
Surface profilometry is a contact measurement technique in which a diamond-tipped stylus is used to measure surface topography as it moves across the surface of a specimen.See More Details
|Physical Electronics Trift III||tspila||B04 MRL||
The PHI TRIFT III is a Time of Flight SIMS, which uses a pulsed primary beam to generate secondary ions which are mass separated by the amount of time it takes for the secondary ion to reach the detector. This produces a full mass spectrum from each primary pulse. The primary strengths of TOF-SIMS are surface/near surface analysis with low detection limits, isotopic analysis, imaging, and rapid depth profiling. Sensitivity to hydrogen, lithium, and elemental isotopes allow for measurements on metal, semiconductor, polymer, and biological samples.See More Details
|Physical Electronics 660||r-haasch||B06 MRL||
The Physical Electronics model PHI 660 Scanning Auger Microprobe (SAM) has elemental mapping with high spatial resolution and is capable of performing scanning electron microscopy (SEM). The instrument is equipped with an in situ impact fracture stage for analysis of grain boundaries and other internal surfaces. Auger point analysis and scanning analysis can be performed with a spatial resolution down to 250 nm, while SEM resolution is around 100 nm. The Auger has a sputter ion gun for depth profiling analysis.See More Details
|Kratos Axis ULTRA||r-haasch||B81 MRL||
The Kratos Axis ULTRA features: Excitation Sources Dual Anode X-ray Source: Mg, Al Monochromatic Xray Source: Al Detection System Small Area Extraction Optics: Hybrid Spherical Capacitor Electron Energy Analyzer for Spectroscopy and 2-D ImagingSee More Details
|NEC Pelletron Accelerator||tspila wswiech||130 MRL||
The NEC Pelletron accelerator can accelerate H and He ions to 2 MeV for He+ and 3 MeV for He2+. There is a single beam line for RBS and ERDA experiments.See More Details