Nano-Master Reactive Ion Etch (RIE) Plasma System

Nano-master NPC 3000 is a bench-top Reactive Ion Etching (RIE) system with showerhead gas distribution and water cooled RF platen. It is designed to meet a wide range of needs including sample cleaning, photoresist stripping, surface modification, polymer etching and silicon etching.

The chamber opens from the top for wafer loading or unloading. It can accept up to 8" (200 mm) wafers

 

 

Features:

• PC controlled system with auto operation mode
• The RF power is provided by 400W 13.5MHz power supply, and an auto-tuner.
• Four MFC gas flow channels: O₂, CF₄, SF₆ and Ar.
• The nano-master chamber is configured with 8.5-inch anodized aluminum plate to accommodate a wide range of wafer sizes.
• EMO protection

Special Notes and Restrictions:

• You must be qualified by staff to use this tool.
• This tool is reserved for the following materials: photoresists, polymers, organic coatings and silicon.Etching of materials other than these requires prior authorization from staff.
• When you are done with your work, always leave the chamber under vacuum. And never leave a dirty chamber for the next user.
• The cooling water, compressed air and pump status should be green when you get to the machine. If not, notify the staff member. Do not proceed any further with the machine.

Resources

Comparison of the RIE systems available in the MRL shared research facilities:

RIE system	Max. RF power (W)	Allowable pressure range (mTorr)	Available process gases	Allowable Materials (*)	Sample Size (**)
Samco RIE-10NR	300	10 - 750	CF4, SF6, O2, Ar	Substrates (e.g., Si, Glass, etc.), 2D Transition-metal dichalcogenides, dielectrics (metal oxides, nitrides, etc.)	Diameter < 8 inches, total thickness < 40 mm
March CS-1701 RIE	400	50 - 350	CF4, O2	Photoresist, polymer, graphene.	Diameter < 4 inches, total thickness < 10 mm
Plasma-therm 790 MF	300	10 - 100	CF4, SF6, CHF3, O2	Silicon, silicon dioxide, silicon nitride	Diameter < 8 inches, total thickness < 10 mm
Nano-master NPC 3000	400	70 - 200	CF4, SF6, O2, Ar	Photoresist, polymer, graphene, silicon	Diameter < 8 inches, total thickness < 10 mm

 

 

 

 

 

 

 

 

 

(*) Discuss with staff before actually using any of those materials and if other materials are needed in the process. This is required for new and existing experienced users.

(**) Etching rate and quality will depend on several factors (type of material, sample thickness, pattern details, masking parameters, etc.). A discussion with staff is important in order to decide tool assignment and feasibility.

 

 

 

 

Manufacturer's website: 
http://www.nanomaster.com/plasmaashing.html