Mrinal Hota

Mrinal Hota he/him/his

Research Scientist

hotamk@illinois.edu

380 Seitz Materials Research Lab

For More Information

Education

MSc. in Physics (June 2007)
PhD (May 2013)

Academic Positions

April 2013 to April 2018: Postdoc at King Abdullah University of Science and Technology (KAUST), Saudi Arabia
April 2018 to August 2023: Research Scientist at King Abdullah University of Science and Technology (KAUST), Saudi Arabia
Present position: Research scientist at, MRL, University of Illinois Urbana-Champaign Since 30th August 2023.

Documents

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Research Interests

Electronics synaptic/ Neuromorphic memory
MXene electronics
Microsupercapacitors
Electrochemical transistors
Oxide thin film electronics (Memristors, Thin film transistors)

Research Areas

Facilities Core: Micro/Nanofabrication & Cleanroom

Selected Articles in Journals

M. K. Hota*, C. K. Sarkar and C. K. Maiti, “Frequency dependent dielectric response of HfTaOx based metal-insulator-metal capacitors,” Semiconductor Science and Technology, vol. 27, no. 8, pp. 085002 (1-7), 2012. Impact Factor: 2.048. Quartile: Q2. DOI: 10.1088/0268-1242/27/8/085002. *Corresponding authorship.
N. Kurra, M. K. Hota, and H. N. Alshareef, “Conducting polymer micro-supercapacitors for flexible energy storage and Ac line-filtering,” Nano Energy, vol. 13, pp. 500–508, 2015. Impact Factor: 19.069. Quartile: Q1. DOI: 10.1016/j.nanoen.2015.03.018.
M. K. Hota, M. N. Hedhili, N. Wehbe, M. A. McLachlan, and H. N. Alshareef, “Multistate Resistive Switching Memory for Synaptic Memory Applications,” Advanced Materials Interfaces, vol. 3, no. 18, pp. 1600192 (1-9), 2016. Impact Factor: 6.389. Quartile: Q2. DOI: 10.1002/admi.201600192.
M. K. Hota, D. H. Nagaraju, M. N. Hedhili, and H. N. Alshareef, “Electroforming free resistive switching memory in two-dimensional VOx nanosheets,” Applied Physics Letters, vol. 107, no. 16, pp. 163106 (1-5), 2015. Impact Factor: 3.971. Quartile: Q2. DOI: 10.1063/1.4933335.
M. K. Hota, M. N. Hedhili, Q. Wang, V. A. Melnikov, O. F. Mohammed, and H. N. Alshareef, “Nanoscale Cross-point Resistive Switching Memory Comprising p-type SnO,” Advanced Electronic Materials, vol. 1, no. 3, pp. 1400035 (1-8), 2015. Impact Factor: 7.633. Quartile: Q1. DOI: 10.1002/aelm.201400035.
F. H. Alshammari, M. K. Hota, Z. Wang, H. Al-jawhari, H. N. Alshareef, “Atomic Layer Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics,” Advanced Electronic Materials, vol. 3, no. 9, pp. 1700155 (1-7), 2017. Impact Factor: 7.633. Quartile: Q1. DOI: 10.1002/aelm.201700155.
M. K. Hota, F. H. Alshammari, K. N. Salama, and H. N. Alshareef, “Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics,” ACS Applied Materials & Interfaces, vol. 9, no. 26, pp. 21856–21863, 2017. Impact Factor: 10.383. Quartile: Q1. DOI: 10.1021/acsami.7b03078.
M. K. Hota, Q. Jiang, Y. Mashraei, K. N. Salama, H. N. Alshareef, “Fractal Electrochemical Microsupercapacitors,” Advanced Electronic Materials, vol. 3, no. 10, pp. 1700185 (1-9), 2017. Impact Factor: 7.633. Quartile: Q1. DOI: 10.1002/aelm.201700185.
X. Guan, Z. Wang, M. K. Hota, H. N. Alshareef, and Tom Wu, “P-Type SnO Thin Film Phototransistor with Perovskite-Mediated Photogating,” Advanced Electronic Materials, vol. 5, no. 1, pp. 1800538 (1-6), 2019. Impact Factor: 7.633. Quartile: Q1. DOI: 10.1002/aelm.201800538.
W. Ogieglo, T. Puspasari, M. K. Hota, N. Wehbe, H. N. Alshareef, and Ingo Pinnau, “Nano-Hybrid Thin-Film Composite Carbon Molecular Sieve Membranes,” Materials Today Nano, vol. 9, pp. 100065, 2020. Impact Factor: 13.364. Quartile: Q1. DOI: 10.1016/j.mtnano.2019.100065
X. Xu, C. Zhang, M. K. Hota, Z. Liu, X.-X. Zhang, and H. N. Alshareef, “Enhanced Quality of Wafer-Scale MoS2 Films by a Capping Layer Annealing Process,” Advanced Functional Materials, vol. 30, pp. 1908040, 2020. Impact Factor: 19.924. Quartile: Q1. DOI: 10.1002/adfm.201908040
H. Kim, M. I. Nugraha, X. Guan, Z. Wang, M. K. Hota, X. Xu, T. Wu, D. Baran, T. D. Anthopoulos, and H. N. Alshareef, “All-Solution-Processed Quantum Dot Electrical Double-Layer Transistors Enhanced by Surface Charges of Ti3C2Tx MXene Contacts,” ACS Nano, vol. 15, pp. 5221−5229, 2021. Impact Factor: 18.027. Quartile: Q1. DOI: 10.1021/acsnano.0c10471
X. Xu, T. Guo, H. Kim, M. K. Hota, R. S. Alsaadi, M. Lanza, X. Zhang, and H. N. Alshareef, “Growth of Two-Dimensional Materials at the Wafer Scale,” Advanced Materials, vol. 34, 2108258, 2022. Impact Factor: 32.086. Quartile: Q1. DOI: 10.1002/adma.202108258.
T. Guo, X. Xu, C. Liu, Y.Wang, Y. Lei, B. Fang, L. Shi, H. Liu, M. K. Hota, H. A. Al-Jawhari, X. Zhang, and H.N. Alshareef, “Large-Area Metal−Semiconductor Heterojunctions Realized via MXene-Induced Two-Dimensional Surface Polarization,” ACS Nano, 2023. Impact Factor: 18.027. Quartile: Q1. DOI: 10.1021/acsnano.2c12684
X. Xu, T. Guo, M. K. Hota, H. Kim, D. Zheng, C. Liu, M. N. Hedhili, R. S. Alsaadi, X. Zhang, and H. N. Alshareef, “High-Yield Ti3C2Tx MXene-MoS2 Integrated Circuits,” Advanced Materials, pp. 2107370, 2021. Impact Factor: 32.086. Quartile: Q1. DOI: 10.1002/adma.202107370
X. Xu, H. Wu, X. He, M. K. Hota, Z. Liu, S. Zhuo, H. Kim, X. Zhang, and H. N. Alshareef, “Iontronics Using V2CTx MXene-Derived Metal‐Organic Framework Solid Electrolytes,” ACS Nano, vol. 14, pp. 9840- 9847, 2020. Impact Factor: 18.027. Quartile: Q1. DOI: 10.1021/acsnano.0c02497
F. H. Alshammari†, M. K. Hota†, and H. N. Alshareef, “Transparent Electronics Using One Binary Oxide for All Transistor Layers,” Small, vol. 14, no. 51, 1803969 (1-8), 2018. Impact Factor: 15.367. Quartile: Q1. DOI: 10.1002/smll.201803969. †Equal contribution.
M. K. Hota, M. K. Bera, B. Kundu, S. C. Kundu, and C. K. Maiti, “A Natural Silk Fibroin Protein-based Transparent Bio-memristor,” Advanced Functional Materials, vol. 22, no. 21, pp. 4493–4499, 2012. Impact Factor: 19.924. Quartile: Q1. DOI: 10.1002/adfm.201200073.
M. K. Hota, Q. Jiang, Z. Wang, Z. L. Wang, K. N. Salama, and H. N. Alshareef, “Integration of Electrochemical Microsupercapacitors with Thin Film Electronics for On-Chip Energy Storage,” Advanced Materials, vol. 31, issue. 25, pp. 1807450 (1-9), 2019. Impact Factor: 32.086. Quartile: Q1. DOI: 10.1002/adma.201807450
M. K. Hota, S. Chandra, Y. Lei, X. Xu, M. N. Hedhili, A. H. Emwas, O. Shekhah, M. Eddaoudi, and H. N. Alshareef, “Electrochemical Thin-Film Transistors using Covalent Organic Framework Channel,” Advanced Functional Materials, vol. 32, 2201120, 2022. Impact Factor: 19.924. Quartile: Q1. DOI: 10.1002/adfm.202201120.