Mrinal Hota
For More Information
Education
- MSc. in Physics (June 2007)
- PhD (May 2013)
Academic Positions
- April 2013 to April 2018: Postdoc at King Abdullah University of Science and Technology (KAUST), Saudi Arabia
- April 2018 to August 2023: Research Scientist at King Abdullah University of Science and Technology (KAUST), Saudi Arabia
- Present position: Research scientist at, MRL, University of Illinois Urbana-Champaign Since 30th August 2023.
Documents
Research Interests
- Electronics synaptic/ Neuromorphic memory
- MXene electronics
- Microsupercapacitors
- Electrochemical transistors
- Oxide thin film electronics (Memristors, Thin film transistors)
Research Areas
Selected Articles in Journals
- Tianchao Guo, Xiangming Xu, Maolin Chen, Yizhou Wang, Simil Thomas, Linqu Luo, Dekang Zhu, Mrinal K. Hota, Yongjiu Lei, Hang Liu, Zhengnan Tian, Osman B. Bakr, Omar F. Mohammed, Xixiang Zhang, Mario Lanza, Thomas D. Anthopoulos, and Husam N. Alshareef, "High-Performance p-Type 1D Van der Waals Electronics Prepared Through Solution Processing" Adv. Mater. e07007, 2025. DOI: 10.1002/adma.202507007
- Mrinal K Hota, Sebastian Pazos, Mario Lanza, Husam N Alshareef, "A review of MXene memristors and their applications," Materials Science and Engineering: R: Reports, 164 (2025) 100983.
- S. C. Barman, Y. Jin, J. K. El-Demelawi, S. Thomas, N. Wehbe, Y. Lei, M. K. Hota, X. Xu, E. A. Hasan, O.F. Mohammed, O. M. Bakr, D. Alsulaiman, and H. N. Alshareef, “Antibody-functionalized MXene-based electrochemical biosensor for point-of-care detection of vitamin D deficiency,†Communications Materials, vol. 6, pp. 1-11, 2025. Impact Factor: 7.5
- M. K. Hota, S. Chandra, Y. Lei, X. Xu, M. N. Hedhili, A. H. Emwas, O. Shekhah, M. Eddaoudi, and H. N. Alshareef, “Electrochemical Thin-Film Transistors using Covalent Organic Framework Channel,” Advanced Functional Materials, vol. 32, 2201120, 2022. Impact Factor: 19.924. Quartile: Q1. DOI: 10.1002/adfm.202201120.
- M. K. Hota, Q. Jiang, Z. Wang, Z. L. Wang, K. N. Salama, and H. N. Alshareef, “Integration of Electrochemical Microsupercapacitors with Thin Film Electronics for On-Chip Energy Storage,” Advanced Materials, vol. 31, issue. 25, pp. 1807450 (1-9), 2019. Impact Factor: 32.086. Quartile: Q1. DOI: 10.1002/adma.201807450
- M. K. Hota, M. K. Bera, B. Kundu, S. C. Kundu, and C. K. Maiti, “A Natural Silk Fibroin Protein-based Transparent Bio-memristor,” Advanced Functional Materials, vol. 22, no. 21, pp. 4493–4499, 2012. Impact Factor: 19.924. Quartile: Q1. DOI: 10.1002/adfm.201200073.
- F. H. Alshammari†, M. K. Hota†, and H. N. Alshareef, “Transparent Electronics Using One Binary Oxide for All Transistor Layers,” Small, vol. 14, no. 51, 1803969 (1-8), 2018. Impact Factor: 15.367. Quartile: Q1. DOI: 10.1002/smll.201803969. †Equal contribution.
- X. Xu, H. Wu, X. He, M. K. Hota, Z. Liu, S. Zhuo, H. Kim, X. Zhang, and H. N. Alshareef, “Iontronics Using V2CTx MXene-Derived Metal‐Organic Framework Solid Electrolytes,” ACS Nano, vol. 14, pp. 9840- 9847, 2020. Impact Factor: 18.027. Quartile: Q1. DOI: 10.1021/acsnano.0c02497
- X. Xu, T. Guo, M. K. Hota, H. Kim, D. Zheng, C. Liu, M. N. Hedhili, R. S. Alsaadi, X. Zhang, and H. N. Alshareef, “High-Yield Ti3C2Tx MXene-MoS2 Integrated Circuits,” Advanced Materials, pp. 2107370, 2021. Impact Factor: 32.086. Quartile: Q1. DOI: 10.1002/adma.202107370
- T. Guo, X. Xu, C. Liu, Y.Wang, Y. Lei, B. Fang, L. Shi, H. Liu, M. K. Hota, H. A. Al-Jawhari, X. Zhang, and H.N. Alshareef, “Large-Area Metal−Semiconductor Heterojunctions Realized via MXene-Induced Two-Dimensional Surface Polarization,” ACS Nano, 2023. Impact Factor: 18.027. Quartile: Q1. DOI: 10.1021/acsnano.2c12684
- X. Xu, T. Guo, H. Kim, M. K. Hota, R. S. Alsaadi, M. Lanza, X. Zhang, and H. N. Alshareef, “Growth of Two-Dimensional Materials at the Wafer Scale,” Advanced Materials, vol. 34, 2108258, 2022. Impact Factor: 32.086. Quartile: Q1. DOI: 10.1002/adma.202108258.
- H. Kim, M. I. Nugraha, X. Guan, Z. Wang, M. K. Hota, X. Xu, T. Wu, D. Baran, T. D. Anthopoulos, and H. N. Alshareef, “All-Solution-Processed Quantum Dot Electrical Double-Layer Transistors Enhanced by Surface Charges of Ti3C2Tx MXene Contacts,” ACS Nano, vol. 15, pp. 5221−5229, 2021. Impact Factor: 18.027. Quartile: Q1. DOI: 10.1021/acsnano.0c10471
- X. Xu, C. Zhang, M. K. Hota, Z. Liu, X.-X. Zhang, and H. N. Alshareef, “Enhanced Quality of Wafer-Scale MoS2 Films by a Capping Layer Annealing Process,” Advanced Functional Materials, vol. 30, pp. 1908040, 2020. Impact Factor: 19.924. Quartile: Q1. DOI: 10.1002/adfm.201908040
- W. Ogieglo, T. Puspasari, M. K. Hota, N. Wehbe, H. N. Alshareef, and Ingo Pinnau, “Nano-Hybrid Thin-Film Composite Carbon Molecular Sieve Membranes,” Materials Today Nano, vol. 9, pp. 100065, 2020. Impact Factor: 13.364. Quartile: Q1. DOI: 10.1016/j.mtnano.2019.100065
- X. Guan, Z. Wang, M. K. Hota, H. N. Alshareef, and Tom Wu, “P-Type SnO Thin Film Phototransistor with Perovskite-Mediated Photogating,” Advanced Electronic Materials, vol. 5, no. 1, pp. 1800538 (1-6), 2019. Impact Factor: 7.633. Quartile: Q1. DOI: 10.1002/aelm.201800538.
- M. K. Hota, Q. Jiang, Y. Mashraei, K. N. Salama, H. N. Alshareef, “Fractal Electrochemical Microsupercapacitors,” Advanced Electronic Materials, vol. 3, no. 10, pp. 1700185 (1-9), 2017. Impact Factor: 7.633. Quartile: Q1. DOI: 10.1002/aelm.201700185.
- M. K. Hota, F. H. Alshammari, K. N. Salama, and H. N. Alshareef, “Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics,” ACS Applied Materials & Interfaces, vol. 9, no. 26, pp. 21856–21863, 2017. Impact Factor: 10.383. Quartile: Q1. DOI: 10.1021/acsami.7b03078.
- F. H. Alshammari, M. K. Hota, Z. Wang, H. Al-jawhari, H. N. Alshareef, “Atomic Layer Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics,” Advanced Electronic Materials, vol. 3, no. 9, pp. 1700155 (1-7), 2017. Impact Factor: 7.633. Quartile: Q1. DOI: 10.1002/aelm.201700155.
- M. K. Hota, M. N. Hedhili, Q. Wang, V. A. Melnikov, O. F. Mohammed, and H. N. Alshareef, “Nanoscale Cross-point Resistive Switching Memory Comprising p-type SnO,” Advanced Electronic Materials, vol. 1, no. 3, pp. 1400035 (1-8), 2015. Impact Factor: 7.633. Quartile: Q1. DOI: 10.1002/aelm.201400035.
- M. K. Hota, D. H. Nagaraju, M. N. Hedhili, and H. N. Alshareef, “Electroforming free resistive switching memory in two-dimensional VOx nanosheets,” Applied Physics Letters, vol. 107, no. 16, pp. 163106 (1-5), 2015. Impact Factor: 3.971. Quartile: Q2. DOI: 10.1063/1.4933335.
- M. K. Hota, M. N. Hedhili, N. Wehbe, M. A. McLachlan, and H. N. Alshareef, “Multistate Resistive Switching Memory for Synaptic Memory Applications,” Advanced Materials Interfaces, vol. 3, no. 18, pp. 1600192 (1-9), 2016. Impact Factor: 6.389. Quartile: Q2. DOI: 10.1002/admi.201600192.
- N. Kurra, M. K. Hota, and H. N. Alshareef, “Conducting polymer micro-supercapacitors for flexible energy storage and Ac line-filtering,” Nano Energy, vol. 13, pp. 500–508, 2015. Impact Factor: 19.069. Quartile: Q1. DOI: 10.1016/j.nanoen.2015.03.018.
- M. K. Hota*, C. K. Sarkar and C. K. Maiti, “Frequency dependent dielectric response of HfTaOx based metal-insulator-metal capacitors,” Semiconductor Science and Technology, vol. 27, no. 8, pp. 085002 (1-7), 2012. Impact Factor: 2.048. Quartile: Q2. DOI: 10.1088/0268-1242/27/8/085002. *Corresponding authorship.