Plasma-Therm Plasma Enhanced Chemical Vapor Deposition System (PECVD)

lasma-Therm plasma enhanced chemical vapor deposition (PECVD) systems are used for depositing SiO₂ or Si₃N dielectric films. These films are typically used for capacitor dielectrics, chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings.

PECVD 1: Plasma-Therm model 730-SLR with load lock chamber.

PECVD 2:Plasma-Therm model 790 with single process chamber.

It is fully programmable with windows-based software, and use a 13.56 MHz RF source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a showerhead, and the samples are placed on the system holder which is heated to 250°C.

• Si₃N₄ is produced from SiH₄/N₂ 2%/98%, NH₃ and N₂.
• SF₆ plasma is used to clean the chamber between depositions.

Features:

• Gases used: NH₃,  2%SiH₄/N₂, N₂ and SF₆
• Full computer operation
• Standard recipes for a variety of film thicknesses
• EMO protection

Special Notes and Restrictions: You must be qualified by staff to use this tool.

When you are done with your work, always leave the chamber under vacuum. And never leave a dirty chamber for the next user.

Report any incidents to MicroFab staff (microfabstaff@mrl.illinois.edu) immediately. In case of emergency, evacuate and call 911.

Manufacturer's website: 
http://www.plasma-therm.com/pecvd.html