IQUIST AJA 2200

The system features a confocal sputtering geometry with a total of four magnetron sputter sources:

• Three 2-inch diameter targets arranged in a confocal configuration.
• One 4-inch diameter target positioned directly below the substrate.

All four targets are powered by a shared power supply capable of delivering up to 1500W. The system supports only DC sputtering.

The substrate holder allows for rotation up to 40 RPM, enhancing film uniformity. It also includes a substrate heating stage capable of reaching temperatures up to 850°C, enabling high-temperature deposition processes and improved film crystallinity.

For process gases, the system is equipped with:

• Argon (Ar) for standard, non-reactive sputtering
• Nitrogen (N₂) and Oxygen (O₂) for reactive sputtering, enabling the formation of nitrides and oxides in-situ

The system is configured with a load-lock chamber that can be pumped down to 1×10⁻⁷ Torr. The main deposition chamber achieves a base pressure of 1×10⁻⁹ Torr and can be further reduced to 5×10⁻¹⁰ Torr following a Titanium getter pre-conditioning process, ensuring ultra-clean vacuum conditions for high-purity film growth.

Additionally, the system includes a substrate RF biasing capability of up to 50W, which can be used for ion-assisted deposition (IAD) or substrate cleaning before the deposition.