Physical Electronics Trift III

Equipment Location: 

The PHI TRIFT III is a Time of Flight SIMS, which uses a pulsed primary beam to generate secondary ions which are mass separated by the amount of time it takes for the secondary ion to reach the detector. This produces a full mass spectrum from each primary pulse.

The primary strengths of TOF-SIMS are surface/near surface analysis with low detection limits, isotopic analysis, imaging, and rapid depth profiling. Sensitivity to hydrogen, lithium, and elemental isotopes allow for measurements on metal, semiconductor, polymer, and biological samples.

The TRIFT III at MRL uses a liquid metal ion source for the analysis ion beam. This gold source can produce Au+, Au2+, and Au3+ ions.

The TRIFT III normally operates in static mode, which allows for the analysis of both elemental and molecular species at the sample surface. Molecules of up to 1,000 amu have been analyzed by the SIMS.

A low energy (2-3 kV) dual ion source (Cs+ and O2+) can be used for material removal during elemental depth profiling work.

The PHI TRIFT III produces ion images from 25 to 400 microns with ion beam rastering and up to several mm with mosaic stage rastering. Lateral resolution is limited by beam spot size which is on the order of 1 micron.