Dry Etching Tools

Plasma-therm 790 MF Reactive Ion Etch (RIE) Plasma System

Brief Description:

Plasma-therm 790 MF is a stand-alone Reactive Ion Etching (RIE) system with showerhead gas distribution and water cooled RF platen. It could be used for silicon, silicon dioxide or silicon nitride etching process.

The chamber could reach a base pressure in the 3x10-5 Torr range, and it can be operated in the pressure range of 10mTorr to 100mTorr. The following gases are installed: CF4, CHF3, SF6 and O2. The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlled separately by a throttle valve between the chamber and the pump. 

All system functions are controlled from the computer. The control program has both manual and automatic modes. 

Features:

  • PC controlled system with manual or auto operation mode
  • 500W, 13.56 MHz RF Generator with Automatic Matching Network
  • Four process gases: CF4, CHF3, SF6 and O2.
  • Single process chamber with 8-inch water cooled RF platen to accommodate a wide range of wafer sizes.
  • EMO protection

Location:  MRL 342
Hours of Operation: 24-hour access

Special Notes and Restrictions: You must be qualified by staff to use this tool.

Etching of organic substances (photoresists, plastic substrates, organic coatings, etc.) is prohibited in this tool. This tool is reserved for the following materials: silicon, silicon nitride and silicon dioxide.

Etching of materials other than these requires prior authorization from MicroFab staff.

When you are done with your work, always leave the chamber under vacuum. And never leave a dirty chamber for the next user.

The pump status should be green when you get to the machine. If not, notify MicroFab staff member. Do not proceed any further with the machine.

Contact:
Xiaoli Wang, Ph.D.
Research Engineer, MRL 380
(217) 244-0392

Manufacturer's website: 
http://www.plasma-therm.com/etch-rie.html

Nano-master Reactive Ion Etch (RIE) Plasma System

Brief Description:

Nano-master NPC 3000 is a bench-top Reactive Ion Etching (RIE) system with showerhead gas distribution and water cooled RF platen. It is designed to meet a wide range of needs including sample cleaning, photoresist stripping, surface modification, polymer etching and silicon etching.

The chamber opens from the top for wafer loading or unloading. It can accept up to 8" (200 mm) wafers

Features:

  • PC controlled system with auto operation mode
  • The RF power is provided by 400W 13.5MHz power supply, and an auto-tuner. 
  • Four MFC gas flow channels: O2, CF4, SF6 and Ar.
  • The nano-master chamber is configured with 8.5-inch anodized aluminum plate to accommodate a wide range of wafer sizes.
  • EMO protection

Location:  MRL 342
Hours of Operation: 24-hour access

Special Notes and Restrictions: You must be qualified by staff to use this tool.

This tool is reserved for the following materials: photoresists, polymers, organic coatings and silicon.

Etching of materials other than these requires prior authorization from MicroFab staff.

When you are done with your work, always leave the chamber under vacuum. And never leave a dirty chamber for the next user.

The cooling water, compressed air and pump status should be green when you get to the machine. If not, notify MicroFab staff member. Do not proceed any further with the machine.

Contact:
Xiaoli Wang, Ph.D.
Research Engineer, MRL 380
(217) 244-0392

Manufacturer's website: 
http://www.nanomaster.com/plasmaashing.html

Nordson March Reactive Ion Etch (RIE) Plasma System 1&2

Brief Description:

March CS-1701 reactive ion etcher is a bench-top system with water cooled RF platen. It is capable of etching photoresist, polymer and graphene.

This system could be operated under manual mode or auto mode.

Features:

  • 400W, 13.56 MHz RF Generator with Automatic Matching Network Delivers Excellent Process Repeatability.
  • Two MFC gas flow channels: O2 and CF4.
  • The March RIE 1/2 chamber is configured with a 7”/5” powered electrode to accommodate a wide range of wafer sizes.

Location:  MRL 342
Hours of Operation: 24-hour access

Special Notes and Restrictions: You must be qualified by staff to use this tool.

This tool is reserved for the following materials: photoresist, polymer and graphene.

Etching of materials other than these requires prior authorization from MicroFab staff.

When you are done with your work, always leave the chamber under vacuum. And never leave a dirty chamber for the next user.

Contact:
Xiaoli Wang, Ph.D.
Research Engineer, MRL 380
(217) 244-0392

Manufacturer's website: 
http://www.nordson.com/en/divisions/march/products/plasma-treatment-systems/rie-system

Harrick Plasma Oxygen Cleaner

Brief Description:

The Harrick Plasma PDC-32G Cleaner is low-cost bench-topinductively coupled plasma device. It may be employed in a broad range of surface engineering applications, including nanoscale surface cleaning, surface preparation and surface modification/treatment.

Features:

Compact, tabletop unit

  • Three adjustable RF power settings: 6.8 W (low), 10.5 W (medium) and 18 W (high)
  • RF frequency: MHz range
  • Process gas: O2
  • 3” diameter x 6.5” length Pyrex glass chamber

Location: MRL 348
Hours of Operation: 24-hour access
Contact: 
Xiaoli Wang, Ph.D.
Research Engineer, MRL 380
(217) 244-0392

Manufacturer's website: 
http://harrickplasma.com/products/basic-plasma-cleaner

Commonwealth Scientific Ion Milling & Thermal Evaporator System

Brief Description:

The Commonwealth Scientific Ion Milling & Thermal Evaporator System is a unique system which integrates the ion milling and thermal evaporator capabilities into one system. It enables Argon ion beam etching and thin film depositions to be performed in one system without needing to take out and expose your samples to the outside environment. 

It’s equipped with an 8 cm Commonwealth Scientific broad beam (Kaufman) ion source which can generate an Ar ion beam current up to 100 mA.

Commonwealth Scientific Ion Milling & Thermal Evaporator System

Features:

  • Argon ion milling, 8 cm Kaufman ion source
  • Maximum beam current: 100 mA
  • System pumps: Cryo pump and roughing pump
  • Thermal evaporator number of source channels:  2
  • Allowed materials for film depositions: Au, Ag, Cu, Fe, Ti, Ni, Cr, Al, Pb, Sn, In. (*All source material should be pellets. Powders are strictly forbidden in this system.)

Location:  MRL 326
Hours of Operation: 24-hour access
Contact:
Fubo Rao, Ph.D.
Research Engineer, MRL 380
(217) 244-6202