Micro/Nano Fabrication and Cleanroom
The Commonwealth Scientific Ion Milling & Thermal Evaporator System is a unique system which integrates the ion milling and thermal evaporator capabilities into one system. It enables Argon ion beam etching and thin film depositions to be performed in one system without needing to take out and expose your samples to the outside environment.
It’s equipped with an 8 cm Commonwealth Scientific broad beam (Kaufman) ion source which can generate an Ar ion beam current up to 100 mA.
Nano-master NPC 3000 is a bench-top Reactive Ion Etching (RIE) system with showerhead gas distribution and water cooled RF platen. It is designed to meet a wide range of needs including sample cleaning, photoresist stripping, surface modification, polymer etching and silicon etching.
The chamber opens from the top for wafer loading or unloading. It can accept up to 8" (200 mm) wafers
Plasma-therm 790 MF is a stand-alone Reactive Ion Etching (RIE) system with showerhead gas distribution and water cooled RF platen. It could be used for silicon, silicon dioxide or silicon nitride etching process.
Dry etching is a key step in device fabrication where layers or selected areas of material are removed by employing a plasma of reactive gases. The MRL offers several dry etching tools applicable to a variety of layers and substrate types and sizes.
Dry Etching Equipment
This equipment was funded through the Illinois MRSEC, NSF Award Number DMR-1720633
The Savannah S100 ALD systems deliver outstanding deposition results and provide maximum experimental flexibility for ALD research, development, and production applications.
Each Savannah system enables digital control of your thin films: grow one layer at a time from the nano scale to the micro scale. The unique Exposure Mode enables conformal film growth on ultra-high aspect ratio features found in materials such as porous foams, fibers and nanogels. The Continuous Mode enables the rapid growth of perfectly dense, uniform and conformal films.
Plasma-Therm plasma enhanced chemical vapor deposition (PECVD) systems are used for depositing SiO2 or Si3N dielectric films. These films are typically used for capacitor dielectrics, chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings.
PECVD 1: Plasma-Therm model 730-SLR with load lock chamber.
PECVD 2:Plasma-Therm model 790 with single process chamber.
The Kurt J. Lesker Nano36 will evaporate a metal film under high vacuum while measuring the thickness in-sit by a thickness monitor. Up to three different materials can be loaded in one batch, and the evaporation sources are sufficiently isolated from each other by shields to prevent cross contamination.
Currently the system is configured for Au, Ag, Cu and Cr evaporation. Due to the limited capacity of tungsten boat and rod, the thickness limit is 200nm/boat for Au, Ag, Cu, and 40nm/rod for Cr.
The facilities include a variety of tools for thin-film and multi-layered structure fabrication using electron-beam and thermal evaporators, sputtering and atomic layer deposition methods. We provide the deposition sources and targets but in many cases users can work with staff to add their sources for their own, specific materials.