Micro/Nano Fabrication and Cleanroom

This equipment was funded through the Illinois MRSEC, NSF Award Number DMR-1720633.

 

The MicroFab cleanroom is used for a wide range of micro and nano-fabrication projects. In addition to UIUC researchers, the cleanroom allows outside academic users as well as users from industry.

Raith eLine EBL system is an electron beam lithography system that has a ZEISS SEM column equipped with a Thermal Field Emission electron gun. The accelerating voltage can be operated at 10 - 30kV. It is capable of patterning ultra fine features with resolution down to 10 nm in PMMA ebeam resist. It has a standard 30 μm aperture along with 7.5 up to 120 µm aperture. Standard write field size is 100 μm and ranges between 1µm to 1 mm. Field stitching error is typically less than 40 nm. Standard sample holder can accommodate up to 5” wafer.

Temescal Ebeam evaporator 4 has an electron beam gun assembly with six automatically selected source crucibles. Currently approved deposition materials are metals only including Au, Ag, Pt, Pd, Cu, Cr, Ti, Ni, Fe, Al. The maximum thickness of a single layer is limited to 300 nm. Thirteen 4-inch wafers or sample holders can be accommodated in the loadlock chamber for line-of-sight deposition. Deposition rate and thickness of material are monitored and controlled automatically. The system is fully automated with computer interface.

AJA sputter coater 2 is an AJA ORION 3 sputter system with three ST20 ORION magnetron sputter guns capable of sputtering conductive and dielectric materials using DC and RF Argon plasma. Co-sputtering (up to three guns, two DC and one RF power supply) is available. The system accommodates 2” targets (1/4” thick) including various materials such as Cr, Ti, Cu, Mo, Al, Ag, Pt, Pd, Mg, Ni, Fe, Co, Si, Ge, W, ITO, SiO2, Si3N4 and MgO. Sample holder size is 4” in diameter. Reactive sputtering with O2 is available.

AJA sputter coater 1 is an AJA ATC 2000 sputter system with four A320 XP UHV magnetron sputter guns capable of sputtering conductive and dielectric materials using DC and RF Argon plasma. Co-sputtering (up to three guns, two DC and one RF power supply) is available. The system accommodates 2” targets (1/4” thick) including various materials such as Cr, Ti, Cu, Mo, Al, Ag, Mg, Ni, Fe, Co, Si, Ge, W, ITO, SiO2, Si3N4 and MgO. Sample holder size is 4” in diameter. Substrate heating is available at up to 400 C.

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