Lithography uses light or electron beam to produce specific patterns on substrates during device fabrication. Photo- and electron-beam lithography facilities are available in the MRL through a series of mask aligners, stampers, ovens, two-photon sub-micron lithography 3D printing and an electron-beam lithography system.

Lithography Equipment

Equipment Name Contact Location
Equipment Name Contact Location
Heidelberg MLA150 aligner for maskless photolithography
  • Xiaoli Wang xlwang84
  • Pengcheng Sun pcsun
388 MRL

The Heidelberg MLA 150 Maskless Aligner is a high-speed direct-write photolithography tool.  It does not physically contact the substrate, uses a micro-mirror array to expose the pattern only in the desired locations.

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Raith eLine Electron Beam Lithography System
  • Xiaoli Wang xlwang84
  • Pengcheng Sun pcsun
364 MRL

Raith eLine EBL system is an electron beam lithography system that has a ZEISS SEM column equipped with a Thermal Field Emission electron gun. The accelerating voltage can be operated at 10 - 30kV. It is capable of patterning ultra fine features with resolution down to 10 nm in PMMA ebeam resist. It has a standard 30 μm aperture along with 7.5 up to 120 µm aperture. Standard write field size is 100 μm and ranges between 1µm to 1 mm. Field stitching error is typically less than 40 nm. Standard sample holder can accommodate up to 5” wafer. Eight sample clips can be used for smaller sample with sample size from 1 to 3 cm. GDSII CAD file is standard file format and can be converted from other CAD files such as Autocad DXF file.

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Raith EBPG5150 100-kV e-Beam Lithography System
  • Xiaoli Wang xlwang84
  • Pengcheng Sun pcsun
364 MRL

The Raith EBPG5150 Electron Beam Lithography System is an ultra-high performance e-beam writer for nanometer-scaled device fabrication.

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MJB4 Mask Aligner
  • Xiaoli Wang xlwang84
313 MRL
MJB3 Mask Aligner
  • Xiaoli Wang xlwang84
313 MRL

The Karl Suss MJB_3 is a contact aligner used to expose the photoresist on samples from small pieces of 1 cm2 to substrates of 3-inch diameter or square and 300um-1mm in thickness. Masks up to 3 inches square. The resolution depends on contact mode, optics, exposure wavelength and "operator technique". Alignment is performed manually by manipulating micrometers while observing the sample and mask with a microscope.

 

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Nanoscribe Photonic Professional GT 3D Printer
  • Xiaoli Wang xlwang84
  • Pengcheng Sun pcsun
335 MRL

The next generation 3D laser lithography system, MRL’s Nanoscribe sets new standards in 3D micro printing and maskless lithography.

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Yield Engineering HMDS Vapor Prime Oven-Cleanroom
  • Xiaoli Wang xlwang84
388 MRL
Headway PWM32 Wafer Spin Coater
  • Pengcheng Sun pcsun
388 MRL
Oriel Re-Exposure Unit
  • Xiaoli Wang xlwang84
387 MRL